发明名称 Organic low-dielectric constant films deposited by plasma enhanced chemical vapor deposition
摘要 A method of forming a low-dielectric constant film on a substrate. The method includes placing the substrate within a plasma processing chamber. Gas within the chamber is removed. A combination of hydrocarbon and hydrofluorocarbon gasses are flowed into the chamber. A high density plasma is created in the chamber. The high density plasma is extinguished. Finally, all gas is removed from the chamber. The method can additionally include a heating step after the film has been formed.
申请公布号 US6083572(A) 申请公布日期 2000.07.04
申请号 US19980031865 申请日期 1998.02.27
申请人 HEWLETT-PACKARD COMPANY 发明人 THEIL, JEREMY A.;RAY, GARY W.;SEAWARD, KAREN L.;MERTZ, FRANCOISE F.
分类号 C23C16/26;H01L21/312;H01L21/768;(IPC1-7):H05H1/20 主分类号 C23C16/26
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