发明名称 |
Organic low-dielectric constant films deposited by plasma enhanced chemical vapor deposition |
摘要 |
A method of forming a low-dielectric constant film on a substrate. The method includes placing the substrate within a plasma processing chamber. Gas within the chamber is removed. A combination of hydrocarbon and hydrofluorocarbon gasses are flowed into the chamber. A high density plasma is created in the chamber. The high density plasma is extinguished. Finally, all gas is removed from the chamber. The method can additionally include a heating step after the film has been formed.
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申请公布号 |
US6083572(A) |
申请公布日期 |
2000.07.04 |
申请号 |
US19980031865 |
申请日期 |
1998.02.27 |
申请人 |
HEWLETT-PACKARD COMPANY |
发明人 |
THEIL, JEREMY A.;RAY, GARY W.;SEAWARD, KAREN L.;MERTZ, FRANCOISE F. |
分类号 |
C23C16/26;H01L21/312;H01L21/768;(IPC1-7):H05H1/20 |
主分类号 |
C23C16/26 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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