| 摘要 |
<p>PROBLEM TO BE SOLVED: To eliminate the use of any dielectric separation of elements from each other even when the element is integrated with other elements. SOLUTION: An SOI(silicon on insulator) substrate is configured out of a semiconductor substrate 1, an insulation film 2 formed on the semiconductor substrate 1, and a semiconductor layer 3 comprising a plurality of photodiode cells C formed on the insulation film 2. In the SOI substrate, one of the adjacent photodiode cells C to each other of the plurality of the photodiode cells C is formed out of an n-type impurity separation layer extended from the surface of the semiconductor layer 3 to the insulation film 2 and a p-type silicon layer 30 surrounded by the n-type impurity separation layer 31. Further, the other of the foregoing adjacent photodiode cells C to each other is formed out of another n-type impurity separation layer 31 surrounding at an interval the foregoing n-type impurity separation layer 31 and another p-type silicon layer 30 sandwiched between the other and foregoing n-type impurity separation layers 31. Then, the plurality of photodiode cells C are connected in series with each other by a plurality of surface electrodes 5.</p> |
