发明名称 METHOD AND DEVICE FOR MANUFACTURE OF SEMICONDUCTOR SUBSTRATE
摘要 PROBLEM TO BE SOLVED: To effectively perform static elimination on the front and rear of a substrate by neutralizing an electric charge that is electrified on the glass substrate using plasma discharge using an inert gas. SOLUTION: A glass substrate 1 is retained on the floor surface of a substrate placement stage 16 in a reactor 2 and is heated by a heater 3 below a floor surface. After that, a gas seed where SiH4, NH3, H2, N2, and the like are mixed is passed through gas piping 5 and a gas is emitted to the entire substrate, a high voltage is applied from a high-frequency power supply 7 after pressure and gas flow rate in a reactor become stable, and a film is formed on the glass substrate 1 due to plasma discharge. A non-reaction gas is unloaded out of a device. After the film formation is completed, the film is released from the reactor 2. In that case, a static electricity is generated and is electrified on the reverse side of the glass substrate 1. After that, such inert gas as He, N2, and H2 is emitted to the entire portion in the reactor, the pressure and gas flow rate are stabilized, a high voltage is applied from the high-frequency power supply 7, and an electric charge being electrified on the front and rear of the glass is electrically neutralized by plasma discharge.
申请公布号 JP2000188288(A) 申请公布日期 2000.07.04
申请号 JP19980365562 申请日期 1998.12.22
申请人 ADVANCED DISPLAY INC 发明人 MATSUKI TOMOYOSHI
分类号 H01L21/31;G02F1/13;G02F1/1333;(IPC1-7):H01L21/31;G02F1/133 主分类号 H01L21/31
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