发明名称 LIGHT RECEIVING ELEMENT
摘要 PROBLEM TO BE SOLVED: To make a light receiving element have a thin-film wavelength converting layer. SOLUTION: In the structure of a light receiving element 4, there are laminated successively from its bottom surface an n-type electrode 5 made of Au, an n-type high-concentration impurity layer 6, an Si substrate 7, a light receiving portion 8 of a p-type high-concentration impurity layer, a p-type electrode 11, an SiO2 film 9, and a wavelength converting layer 10 made of a fluorescent substance. Hereupon, the film of the wavelength converting layer 10 is formed by depositing on the SiO2 film 9 the fluorescent substance through the projection of an electron beam.
申请公布号 JP2000188416(A) 申请公布日期 2000.07.04
申请号 JP19980364245 申请日期 1998.12.22
申请人 SANYO ELECTRIC CO LTD;TOTTORI SANYO ELECTRIC CO LTD 发明人 NISHIMURA SUSUMU
分类号 H01L31/10;H01L27/14;(IPC1-7):H01L31/10 主分类号 H01L31/10
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