发明名称 |
Method for fabricating local interconnect |
摘要 |
A method for fabricating a local interconnect. A gate having a gate oxide layer, a gate polysilicon layer and a cap layer is formed on a provided substrate. A spacer is formed on the sidewall of the gate, and a source/drain region is formed in the substrate. A planarized dielectric layer is formed over the substrate to expose the cap layer. A portion of the dielectric layer and the spacer on one side of the gate is removed to form an opening, so that the source/drain region is exposed. The opening is transformed into a local-interconnect opening by removing the cap layer. A local interconnect is formed by forming a conductive layer in the local-interconnect opening.
|
申请公布号 |
US6083827(A) |
申请公布日期 |
2000.07.04 |
申请号 |
US19980212084 |
申请日期 |
1998.12.15 |
申请人 |
UNITED MICROELECTRONICS CORP. |
发明人 |
LIN, TONY;CHEN, COMING;YEH, WEN-KUAN |
分类号 |
H01L21/321;H01L21/336;H01L21/768;(IPC1-7):H01L21/476 |
主分类号 |
H01L21/321 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|