发明名称 COMPOSITION FOR FORMING THICK FILM CONDUCTOR
摘要 PROBLEM TO BE SOLVED: To provide a composition for forming a thick film conductor almost causing no phenomenon that a noble metal element melts in a molten solder in soldering, i.e., a solder biting and capable of obtaining a thick film conductor having a strong adhesive strength with a ceramic substrate. SOLUTION: The composition for forming a thick film conductor comprises a conductive powder, an oxide powder and an organic vehicle and contains a SiO2-CaO based glass powder in which a CaO/SiO2 ratio by weight is 0.14-0.90 as a oxide powder, an Al2O3 powder and a softening point glass powder. A ratio of the oxide powder based on 100 pts.wt. of the conductive powder is preferably 2-10 pts.wt. of SiO2-CaO based glass powder, 1-5 pts.wt. of Al2O3 powder and 0.1-10 pts.wt. of the low softening point glass powder.
申请公布号 JP2000188014(A) 申请公布日期 2000.07.04
申请号 JP19980366233 申请日期 1998.12.24
申请人 SUMITOMO METAL MINING CO LTD 发明人 KAWAKUBO KATSUHIRO
分类号 H05K1/09;C09D5/24;C09D7/12;H01B1/20;(IPC1-7):H01B1/20 主分类号 H05K1/09
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