发明名称 Method of reducing carbon incorporation into films produced by chemical vapor deposition involving organic precursor compounds
摘要 In one aspect, a deposition method comprises the following steps: a) forming a layer on a semiconductive substrate, the layer comprising predominately an inorganic material, the layer also comprising incorporated carbon; b) generating a plasma adjacent the layer from a component gas, the component gas comprising Ar, and c) utilizing the plasma to remove the carbon from the layer.
申请公布号 US6083568(A) 申请公布日期 2000.07.04
申请号 US19970823020 申请日期 1997.03.21
申请人 MICRON TECHNOLOGY, INC. 发明人 SANDHU, GURTEJ S.
分类号 B05D3/06;C23C14/02;C23C16/44;C23C16/455;C23C16/56;H01L21/285;H01L21/31;H01L21/44;H01L21/70;H01L51/40;H05H1/00;(IPC1-7):C23C16/56 主分类号 B05D3/06
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