发明名称 |
Cobalt silicidation using tungsten nitride capping layer |
摘要 |
A substantially inert capping layer of tungsten nitride is deposited on cobalt layers prior to silicidation, thereby avoiding any substantial interaction with cobalt. The tungsten nitride capping layer also functions as a diffusion barrier preventing oxygen from reaching the silicidation area. The resulting cobalt silicides layer exhibit lower resistivity than those formed employing a titanium capping layer. Embodiments include rapid thermal annealing to initially form a layer of cobalt monosilicide consuming a portion of the cobalt layer, removing the tungsten nitride and unreacted cobalt layer, and rapid thermal annealing again to convert the cobalt monosilicide layer to a low resistivity layer of cobalt disilicide.
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申请公布号 |
US6083817(A) |
申请公布日期 |
2000.07.04 |
申请号 |
US19990323818 |
申请日期 |
1999.06.02 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
NOGAMI, TAKESHI;CHEN, ROBERT;MORALES, GUARIONEX |
分类号 |
H01L21/28;H01L21/285;H01L21/336;(IPC1-7):H01L21/320 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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