Method for relieving lattice mismatch stress in semiconductor devices

摘要

A method for growing a crystalline layerÄ14Ü that includes a first material on a growth surface of a crystalline substrateÄ12Ü of a second material, wherein the first material and the second material have different lattice constants. A buried layerÄ18Ü is generated in the substrateÄ12Ü such that the buried layerÄ18Ü isolates a layer of the substrateÄ12Ü that includes the growth surface from the remainder of the substrateÄ12Ü. The second material is then deposited on the growth surface at a growth temperature. The isolated layerÄ16Ü of the substrateÄ12Ü has a thickness that is less than that thickness at which the crystalline lattice of the first material will deform in response to the second material crystallizing thereon. The buried layerÄ18Ü is sufficiently malleable at the growth temperature to allow the deformation of the lattice of the isolated layerÄ16Ü without deforming the remainder of the substrateÄ12Ü. The present invention may be utilized for growing III-V semiconducting material layers on silicon substrates. In the case of silicon-based substrates, the buried layerÄ18Ü is preferably SiO2 that is sufficiently malleable at the growth temperature to allow the deformation of the isolated substrate layerÄ16Ü. <IMAGE>