发明名称 |
Method and apparatus for plasma etching a wafer |
摘要 |
A plasma etching machine comprises a process chamber defining an interior region and including a bottom wall having an aperture and a block disposed in the aperture and including a longitudinally extending bore. A shaft extends through the bore and includes a spider push rod extending longitudinally therethrough. An internally cooled chuck is coupled to the shaft and disposed in the interior region and cooperates with the shaft to define a chamber. A spider is disposed in the chamber and is coupled to the push rod. A lift mechanism is coupled to the shaft and the push rod so that the spider pushes up on a wafer in response to actuation of the lift mechanism. A wafer clamping mechanism is coupled to the push rod if a mechanical clamp is used. In the case of electrostatic clamp the bias applied to the chuck is coupled with the use of a rotational roller to allow the bias to be applied to the chuck for the duration of the etch process. A RF source is needed for ionization of the gas. If the plasma etching machine has RF power applied through the bottom, then a rotational roller is used for this as well and must be isolated from the electrostatic voltage used to clamp the wafer. A drive motor is coupled to the shaft for rotating the shaft during a plasma etching process.
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申请公布号 |
US6080272(A) |
申请公布日期 |
2000.06.27 |
申请号 |
US19980074591 |
申请日期 |
1998.05.08 |
申请人 |
MICRON TECHNOLOGY, INC. |
发明人 |
LANGLEY, RODNEY C.;JOHNSON, DAVID R.;HOFER, WILLARD L. |
分类号 |
H01L21/00;(IPC1-7):C23F1/02;B23B5/22 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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