| 摘要 |
PROBLEM TO BE SOLVED: To obtain a silicon carbide film in which reverse phase region boundary faces are effectively reduced or dissipated by providing the total or a part of the surface of a single crystal substrate with plural undulations elongating parallel in one direction and growing silicon carbide on the surface of the substrate. SOLUTION: On the surface of a single crystal substrate, silicon carbide is epitaxially grown with the crystal orientation succeeded to produce a silicon carbide film. An epitaxial growing mechanism capable of limiting the propagating orientation of facial defects generated in the film to the inside of the prescribed crystal plane at the time of the growing of the silicon carbide film is used. In the case that the average value of the intervals between the tip parts of the undulations in the surface of the substrate is defined as W, at the point of time in which the film thickness of the silicon carbide film reaches W/ρ2, all reverse phase region boundary faces dissipate. Thus, the film thickness is preferably controlled to >=W√2. Moreover, preferably, the intervals between the tip parts of the undulations in the surface of the substrate is 0.01 to 10μm, the difference in the height of the undulations is 0.01 to 20μm, and also, the slanting degree of the slant faces in the undulations is 1 to 55 deg..
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