| 摘要 |
In a solid state image sensor comprising a pixel array section formed at a semiconductor substrate, and a substrate voltage setting circuit provided at the semiconductor substrate as a peripheral circuit of the pixel array section and including a non-volatile memory transistor, a light block film is formed to cover a gate electrode of the non-volatile memory transistor. This light block film is constituted of the same primary color filters as the primary color filters provided in the pixel array section. Thus, since the injecting of the light to a gate insulating film of the non-volatile memory transistor is prevented, after the electric charges are trapped in the gate insulating film of the non-volatile memory transistor such as the MNOS type, the MONOS type and the floating gate for giving a desired substrate voltage, the variation of the threshold voltage of the non-volatile memory transistor is prevented, with the result that substrate voltage generating circuit of the peripheral circuit can supply the stabilized substrate voltage having less variation, and therefore, the solid state image sensor operates with a high reliability.
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