发明名称 FIELD EMISSION-TYPE ELECTRON SOURCE AND MANUFACTURING METHOD THEREOF AND DISPLAY USING THE ELECTRON SOURCE
摘要 PURPOSE: A field emission-type electron source and manufacturing method thereof and display using the electron source is provided for emitting electron beams by means of electrical field emission and a manufacturing method thereof, and to a display using the field emission-type electron source. CONSTITUTION: A field emission type electron source(10) is provided with an n-type silicon substrate(1), a strong field drift layer(6) formed on the n-type silicon substrate(1) directly or inserting a polycrystalline silicon layer(3) therebetween, and an electrically conductive thin film(7), which is a thin gold film, formed on the strong field drift layer (6). Further, an ohmic electrode(2) is provided on the back surface of the n-type silicon substrate(1). Hereupon, electrons, which are injected from the n-type silicon substrate(1) into the strong field drift layer(6), drift in the strong field drift layer(6) toward the surface of the layer, and then pass through the electrically conductive thin film(7) to be emitted outward. The strong field drift layer(6) is formed by making the polycrystalline silicon(3) formed on the n-type silicon substrate(1) porous by means of an anodic oxidation, and further oxidizing it using dilute nitric acid or the like
申请公布号 KR20000035507(A) 申请公布日期 2000.06.26
申请号 KR19990050883 申请日期 1999.11.16
申请人 MATSUSHITA ELECTRIC WORKS LTD. 发明人 HATAI TAKASHI;KOMODA TAKUYA;HONDA YOSHIAKI;AIZAWA KOICHI;WATABE YOSHIFUMI;ICHIHARA TSUTOMU;KONDO YUKIHIRO;KOSHIDA NOBUYOSHI
分类号 H01J1/30;H01J1/312;H01J9/02;(IPC1-7):H01J1/30 主分类号 H01J1/30
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