| 摘要 |
A memory device formed in a substrate having a trench with side walls formed in the substrate. The device includes a bit line conductor and a word line conductor. A signal storage node has a first electrode, a second electrode formed within the trench, and a node dielectric formed between the first and second electrodes. A signal transfer device has: (i) an annular signal transfer region with an outer surface adjacent the side walls of the trench, an inner surface, a first end, and a second end; (ii) a first diffusion region coupling the first end of the signal transfer region to the. second electrode of the signal storage node; (iii) a second diffusion region coupling the second end of the signal transfer region to the bit line conductor; (iv) a gate insulator coating the inner surface of the signal transfer region; and (v) a gate conductor coating the gate insulator and coupled to the word line. A conductive connecting member couples the signal transfer region to a reference voltage to reduce floating body effects. |
