发明名称 Substrate for ic crystals
摘要 An IC chip carrier has a base formed from a film of dielectric material and a system of oriented and fixed conducting paths on a top surface of the base. A first group of the conducting paths is configured to mate directly with chip contact pads and a second group of the conducting paths is configured to mate with mating contacts on a circuit board. The IC chip carrier includes further a plurality of contacts for selectively connecting to the mating chip contact pads and the mating contacts on the circuit board. All contacts are formed as metallized vias having top edges coupled to the conducting paths on the top surface of the base, wherein bottom edges of the vias form contact assemblies with the mating contact pads of the chip or with mating contact pads of the circuit board. The contact assemblies are formed through joints filled with an electric-conductive binder, wherein the mating contact pads of the chip and the mating contact pads of the circuit board face the vias, and wherein the contact assemblies together with conducting paths are configured to electrically couple the chip contact pads directly with contact pads of the circuit board.
申请公布号 AU2965299(A) 申请公布日期 2000.06.26
申请号 AU19990029652 申请日期 1999.03.03
申请人 ALEXANDR IVANOVICH TARAN 发明人 ALEXANDR IVANOVICH TARAN;VIKTOR KONSTANTINOVICH LJUBIMOV
分类号 H01L23/32;H01L21/60;H05K1/14;H05K3/00;H05K3/34 主分类号 H01L23/32
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