| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device wherein the yield is improved, the manufacturing process is simplified, and the leakage current is reduced. SOLUTION: In a semiconductor device having a silicon-on-insulator(SOI) substrate having a buried insulation film 2 of a given thickness on the entire surface of a support semiconductor substrate 3 and a semiconductor active layer 1 of a specified thickness on the buried insulation film 2 surface, first trenches piercing the semiconductor active layer 1 and the buried insulation film 2 on the SOI substrate are formed, and a conductive film 5 is formed on the support semiconductor substrate 3 underneath the first trenches 15 and on the side faces of the first trenches 15.
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