| 摘要 |
PROBLEM TO BE SOLVED: To increase the breakdown voltage, reduce the on-resistance, and at the same time achieve high integration. SOLUTION: In a semiconductor device, a source region 4, a channel region 8, and a drain region 5 are provided. Further, a gate electrode 7 is formed on the channel region 8, and a plurality of configurations consisting of an N- layer (drift region) 22 that is formed shallowly (a first N- layer 22A) below the gate electrode 7 and deeply (a second N- layer 22B) near the drain region 5 between the channel region 8 and the drain region 5 are provided via an element separation film 9A. In the semiconductor device, a channel stopper layer 38 is formed below the element separation film 9A.
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