发明名称 Substrate for use in package of semiconductor device, semiconductor package using the substrate, and methods for manufacturing the substrate and the semiconductor package
摘要 A substrate for use in a semiconductor package is fabricated by preparing a composite metal laminate consisting of a first metal layer, a second metal layer, and a carrier layer positioned in this order. The first metal layer has etching characteristics different to those of the second metal layer with respect to the same etchant. The first metal layer is selectively etched until the second metal layer is exposed, thereby forming pillar-like interconnections. The gap between the interconnections is then filled with a resin so as to form a resin base with interconnections. The carrier layer is removed from the second metal layer, and the second metal layer is selectively etched until the first metal layer or the resin base is exposed, thereby forming a conductive pattern on the resin base.
申请公布号 US2002020909(A1) 申请公布日期 2002.02.21
申请号 US20010907639 申请日期 2001.07.19
申请人 HITACHI CHEMICAL CO., LTD. 发明人 WAKASHIMA YOSHIAKI;FUKUTOMI NAOKI;SUZUKI KAZUHISA;FUNAKI TAKESHI
分类号 H01L23/12;H01L21/48;H01L23/14;H01L23/498;(IPC1-7):H01L23/48 主分类号 H01L23/12
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