APPARATUS AND METHOD FOR PLASMA ETCHING

摘要

PROBLEM TO BE SOLVED: To efficiently execute a uniform etching process at a low cost. SOLUTION: The plasma etching method for plasma-etching a substrate 7 to be treated on a lower electrode 3 opposed to an upper electrode 6 in a treating chamber 5 is such that, a mixed gas contg. O and F is fed into the treating chamber 5 and the plasma discharge is performed between the upper and lower electrodes, in the condition that the product PL of the discharge pressure P of the mixed gas in the treating chamber 5 and the interelectrode distance L (m) ranges between 2.5 Pa.m and 15 Pa.m which provides a good etching rate.