MANUFACTURE OF COMPOUND SEMICONDUCTOR ELEMENT

摘要

PROBLEM TO BE SOLVED: To simplify the manufacturing process by oxidizing a part of compound semiconductor layer and performing growth selectively, using the oxidized compound semiconductor layer as a mask. SOLUTION: When a selective growth layer is formed in the gap of a mask, an oxidized compound semiconductor mask is employed in place of an SiO2 mask. For example, an n-AlGaAs clad layer 2, an n-GaInP oxidation stop layer 3 and an AlGaAs layer 4 are laminated sequentially on a GaAs (100) substrate 1. The AlGaAs layer 4 is patterned into a pair of stripe mask and oxidized. The oxidized AlGaAs layer 5 is employed as a mask for selective growth and a double heterostructure is grown selectively. Since the oxidized AlGaAs layer 5 is employed as a mask for selective growth, formation of an SiO2 mask is not required, and the deposition process of SiO2 can be eliminated resulting in a simplified manufacturing method.