| 摘要 |
PROBLEM TO BE SOLVED: To provide a circuit and a method which reduce parasitic bipolar effect during electrostatic discharge. SOLUTION: A circuit 20 contains a resistor 26 and a current source 32 increasing a source voltage of an N-channel transistor, prevents forward direction bias of a voltage between a base and an emitter of a parasitic bipolar element, and prevents electric conduction in the parasitic bipolar element. For example, comparatively small resistance 26 is connected between a source and a ground of the N-channel transistor 24. By using a current source 32, a part of an ESD current from positive ESD event is made to flow in the small resistor 26, a source voltage of the N-channel transistor 24 is increased during the event, and snapback of the parasitic bipolar element is prevented.
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