| 摘要 |
PROBLEM TO BE SOLVED: To realize a high speed access by shortening data reading time and write recovery time. SOLUTION: A current mirror type loading circuit 2 is provided to a pair of global data lines (GIO) in the device. A read gate amplifier, that includes a MOS transistor whose gate is connected to local data lines LIO and ZLIO corresponding to local data line pairs (LIO#O to LIO#m), is used as a block selection gate. Moreover, a data writing driver 3aw writes writing data and the data, which are logic inverted data, during an equalizing operation after a data writing.
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