| 摘要 |
PROBLEM TO BE SOLVED: To lower a fluidization temperature for flattening, in a method for forming a flattened interlayer insulation film, which coats a wiring layer and the like of a semiconductor integrated circuit device. SOLUTION: Film-forming gas, to which oxidizing gas is not added, is activated and reacted by a plasma conversion with a mixed gas containing a phosphorus-containing compound, that is composed of a trivalent phosphorus and an Si-O-P structure, and a silicon-containing compound having at most one oxygen, or a film-forming gas, in which oxidizing gas is added to the mixed gas, is activated and reacted by a plasmatic operation. Subsequently, a silicon- containing insulation film 14 containing P2O3 is formed on an deposited substrate 101.
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