| 摘要 |
PROBLEM TO BE SOLVED: To prevent the oxide dielectric film of a capacitor when forming an insulation film for covering the capacitor from deteriorating, prevent wiring formed on the insulation film from being oxidized, and at the same time improve integration for a semiconductor device with a capacitor. SOLUTION: A semiconductor device includes an impurity diffused layer 3d that is formed on a semiconductor substrate 1, an insulation film 4 for covering the impurity diffused layer 3d, a capacitor Q that is formed on the insulation film 4 and consists of a lower electrode 5, an oxide dielectric film 6, and upper electrodes 7 and 17, an interlayer insulation film 8 for covering the capacitor Q, two openings 8a and 8c that are formed at the interlayer insulation film 8 and expose the impurity diffused layer 3d and the upper electrode 7, local wiring 9a that is formed in the two openings 8a and 8c and on the interlayer insulation film 8 and is formed in a range including a region where the oxide dielectric film 6 is in contact with at least the upper electrode 7, and separate interlayer insulation films 10 and 11 for covering the local wiring 9a. |
