| 摘要 |
PROBLEM TO BE SOLVED: To increase the parastic resistance of an impurity diffusion layer and reduce the depth thereof. SOLUTION: A gate oxide film 601 and a gate electrode 602 are formed on a P-type semiconductor substrate 600 in sequence, and an oxide film 603 is formed on the entire surface of the semiconductor 600. After a sidewall 604 is formed on both side surfaces of the gate electrode 602, an N-type impurity is applied thereto through ion implantation by using the gate electrode 602 and sidewall 604 as a mask, and the entire substrate is heated so as to form an N-type first impurity diffusion layer 605. The oxide film 603 exposing over the semiconductor substrate 600 is removed, and a silicide film 607 is formed on the surfaces of the gate electrode 602 and first impurity diffusion layer 605, and then the sidewall 604 is removed. An N-type impurity is applied through ion implantation by using the gate electrode 602 as a mask, and the entire substrate is heated so as to form an N-type second impurity diffusion layer 608 in a shallower area than the first impurity diffusion layer 605.
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