发明名称 MOLECULAR ION ENHANCED ION SOURCE DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a molecular ion enhanced ion source device capable of producing high current ions. SOLUTION: The ion source device has a pair of mirror electromagnets 11, 12 arranged at regular intervals on the outside of a plasma chamber 10, and a multipole permanent magnet device 20 arranged between a pair of mirror electromagnets, on the outside of the plasma chamber 10. A confinement magnetic field is formed within the chamber with a pair of mirror electromagnets and the multipole permanent magnet device, and gas for producing ions and 2.45 (GHz) microwave are introduced into the magnetic field to produce ion beams in the center axis direction of the chamber.
申请公布号 JP2000173486(A) 申请公布日期 2000.06.23
申请号 JP19980343324 申请日期 1998.12.02
申请人 SUMITOMO EATON NOBA KK 发明人 MATSUSHITA HIROSHI
分类号 H01J27/18;H01J37/08;H05H1/18;H05H1/46 主分类号 H01J27/18
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