| 摘要 |
PROBLEM TO BE SOLVED: To provide a photoconductive element which has a structure of electrodes capable of efficiently collecting carriers generated by received light, and an excellent resistance to ultraviolet rays. SOLUTION: A photoconductive element is formed so that a light receiving layer 1 is an n-type or p-type high resistance layer of GaN group crystal, and one surface of the light receiving layer 1 is a light receiving surface 1a which is irradiated with light L to be received, and the ohmic electrodes P and Q at both positive and negative pole side are oppositely located on the light receiving surface 1a. As a result, carriers can be generated directly under the electrodes of the light receiving layer to more efficiently collect the carriers, allowing the element to be more sensitive. This also allows the problem of a high contact resistance which often occurs when the electrodes are formed on the high resistance layer to be resolved.
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