| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for setting conditions for manufacture of MOSFETs having allowable characteristics by evaluating an influence of energy contamination on characteristic of a device. SOLUTION: When ions are implanted into a wafer by using a differential implantation device so as to form a source/drain of a MOSFET, conditions for determining the degree of vacuum and/or distance of a beam line of the differential implantation device are set so that indexes indicating the characteristics of the MOSFET are within a specified allowable range. For its sake, a curve showing the quantity of allowable energy contamination is made, thereby obtaining the quantity of allowable energy contamination to a desired depth of junction according to the curve.
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