| 摘要 |
PROBLEM TO BE SOLVED: To provide an interlayer bonding process having a high reliability in the method of forming continuity holes for electric interlayer connections of a semiconductor device whereby gaps formed at bonds of the continuity holes with metal wirings adjacent the continuity holes, filling defects and corrosion factors are removed. SOLUTION: Openings connected to a lower layer are formed in an insulation film 1 of a semiconductor substrate, a barrier metal layer 2 is formed, this layer 2 is tapered at the top edges A of opening structures, tungsten 3 is filled in the opening structures and etched to form tungsten plugs at a high selectivity to tungsten, with leaving the barrier metal layer, a coating film (resist) 4 covers the tungsten plugs, the barrier metal layer on the insulation film 1 is removed by etching at a high selectivity to the barrier metal layer to form metal contact holes, and an Al wiring 6 is formed over the metal contact holes.
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