发明名称 DYNAMIC SEMICONDUCTOR STORAGE DEVICE
摘要 PROBLEM TO BE SOLVED: To ignore precharge time. SOLUTION: This device has a memory cell structure for connecting a capacitor 7 being a storage medium to data lines 1 and 2 through switching elements 5 and 6. The switching elements 5 and 6 and the data lines 1 and 2 are provided in parallel to the capacitor 7. Operating commands are successively given to plural data lines to drive them.
申请公布号 JP2000173268(A) 申请公布日期 2000.06.23
申请号 JP19980351982 申请日期 1998.12.10
申请人 NEC CORP 发明人 IMAI KAZUYUKI
分类号 G11C11/409;(IPC1-7):G11C11/409 主分类号 G11C11/409
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