| 摘要 |
PROBLEM TO BE SOLVED: To improve flattening in surface polishing of a semiconductor device. SOLUTION: A polishing pad 1 bonded on a top face of a rotating surface plate 2 is constituted by accumulating an elastic layer 3 provided on a surface plate 2 side and a hard resin layer 4 provided on a semiconductor device side, a slurry guide groove 7 forming a curve shape having a start point and an end point at outer periphery of the polishing pad and a turn point in the vicinity of the center of rotation of the polishing pad is provided on a top face of the hard resin layer 4, and the hard resin layer is made of a vinyl copolymer material containing ABS resin material. Consequently, since a surface of the polishing pad is made of the hard resin layer having proper hardness, wet property, the diffusion property and the holding property of slurry are improved due to the groove, a high machining rate for conventional polishing by means of ceria slurry can be achieved, surface roughness can be reduced, and flattening of a surface of a semiconductor device can be improved. |
