| 摘要 |
optoelectronic devices. SUBSTANCE: upon diffusion doping of silicon surface photosensitive areas of surface are covered, prior to depositing contacts, with porous silicon film that functions as shielding mask during deposition of contacts. Additional growth of transducer efficiency is provided due to the fact that when p-n junction is formed, phosphor-doped layer on porous silicon areas is made thinner than on contact areas. EFFECT: facilitated manufacture, improved efficiency of device. 2 cl |
