| 摘要 |
Disclosed are a semiconductor device and a method for fabricating the same which improve short channel effect and increase current driving force. The semiconductor device includes a first conductivity type semiconductor substrate, a gate electrode formed on the semiconductor substrate, a sidewall insulating film formed at both sides of the gate electrode, a second conductivity type first lightly doped impurity region and a second conductivity type second heavily doped impurity region formed in the semiconductor substrate at both sides of the gate electrode, a first conductivity type first impurity region for surrounding the second conductivity type first impurity region, and a first conductivity type second impurity region for surrounding the second conductivity type second impurity region.
|
