| 摘要 |
Creating relatively pure and consistent crystals of high performance minerals, such as diamond, has long been pursued. Unfortunately, synthesizing crystals that exhibit deep bonding generally requires high temperatures and high pressures for the formation of large crystals. Alternatively, high pressure and explosive shock waves can also be utilized, as demonstrated by closed-bomb diamond synthesis. Diamond crystal formation at lower temperatures and pressures have been demonstrated, but the formations have been thin and inconsistent. A method of forming diamond and the synthesis of other high performance crystals that are consistent, and can be grown to larger sizes has not existed, nor has a means of providing uniform and consistent thin layers of diamond and other such crystals been demonstrated. The present invention solves those needs by providing a method and apparatus with which to grow uniform and consistent thin sections as well as large crystals that are deeply bonded, and to do so at lower temperatures and pressures then is currently possible, and at lower cost.
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