II-VI compound semiconductor based light emitting device having recombination regions spatially arrayed in a planar direction of the active layer to prevent crack propagation

摘要

Provided by the present invention is a II-VI compound semiconductor based light emitting device which is suppressed in the propagation velocity of crystal defects at the time of current application, has a prolonged lifetime and can be readily mass produced. The device has a recombination region and non-recombination region of carriers which have been separated spatially each other in the plane of the active layer.