SEMICONDUCTOR THIN FILM, SEMICONDUCTOR ELEMENT, SEMICONDUCTOR DEVICE, AND MANUFACTURE THEREOF

摘要

PROBLEM TO BE SOLVED: To enable reduction of a threading dislocation density and suppression of deviation in a crystal orientation. SOLUTION: A plurality of facets 1 are arranged to cover an underlying semiconductor layer 2 and to form a selective-growth embedded semiconductor layer 3. A threading dislocation in the semiconductor layer 3 is flexedly extended in a direction, extending substantially along the arranged surface of the layer 2, so that the threading dislocations of the adjacent facets 1 meet and flex in a direction intersecting with the arrangement surface, thus forming a low defect density region and suppressing a deviation in crystal orientation.