| 摘要 |
PROBLEM TO BE SOLVED: To obtain a compound semiconductor substrate with superior electrically insulating performance between a compound semiconductor layer and an Si substrate, low dislocation density, and high quality, and a method for manufacturing this substrate. SOLUTION: An initial film 2 of a lower buffer layer constituted of GaAs is grown at a substrate temperature of 330-400 deg.C by 0.01-0.04μm by using the two-stage growing method of an MOCVD method on an Si substrate 1, and the temperature is increased to 600-750 deg.C in an arsine atmosphere, and then a lower buffer layer 3 constituted of GaAs is grown at a substrate temperature of 550-700 deg.C to 1-2μm. Next, an AlAs layer 4, whose energy gap is wider than that of an upper buffer layer 5 constituted of GaAs, is grown at a substrate temperature 550-750 deg.C by 0.05-1μm on the lower buffer layer 3 formed by the two stage growing method for obtaining a high resistance GaAs buffer layer, and then the upper buffer 5 constituted of GaAs is grown to 0.1-1μm.
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