| 摘要 |
PROBLEM TO BE SOLVED: To prevent latch-up phenomena and improve the dielectric strength of an insulated-gate type semiconductor device. SOLUTION: A semiconductor device comprises an n-type drift region 21, a plurality of p-type base regions 1 formed on a part of the surface of the drift region 21, and a p-type carrier extraction region 2 formed on a part of surface of the drift region 21 among a plurality of base regions 1. The semiconductor device also has a first n-type main electrode region 3 formed in the base region 1, a second main electrode region 20 formed coming in contact with the bottom of the drift region 21, a gate insulation film 23 formed coming in contact with the surface of the base region 1, and a control electrode 24 formed on the upper side of the gate insulation film 23. The second main electrode region 20 and the carrier drawing region 2 are mutually connected by a first main electrode 27. The carrier drawing region 2 relatively reduces the number of holes drawing in the base region 1.
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