| 摘要 |
PROBLEM TO BE SOLVED: To provide a MOS semiconductor integrated circuit, with less through current. SOLUTION: An output circuit 20 is constituted of an N3 (n-channel MOSFET), an N4 (n-channel MOSFET), a resistor 1 and a Zener diode 2, the drain of the N4 is connected with a high-potential side 3 of a high-voltage power supply, the source of the N4, the end of one side of the ends of the resistor 1 and an anode of the diode 2 are connected with each other, the connection point of these of the source of the N4, the end on one side of the ends of the resistor 1 and the anode of the diode 2 is a high-voltage output point 5, a high-voltage output is outputted from this point 5, the gate of the N4, the other end of the resistor 1 and a cathode of the diode 2 are connected with each other, this gate of the N4 and a drain of the N3 are connected with each other, the source of the N3 is connected with the ground 4, the output point of a level shift circuit 10 is a point B, this point B and a gate of a P3 (p-channel MOSFET) are connected with each other, the source of the P3 is connected with the high-potential side 3, and a the drain of the P3 is connected with the gate of the N4. By using n-channel MOSFETs (N1 and N2) and the n-channel MOSFETs (N3 and N4) for an upper arm of the circuit 20, reduction in through current in a MOS semiconductor integrated circuit is obtained.
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