| 摘要 |
PROBLEM TO BE SOLVED: To form a small hole exceeding the limit in a photoengraving on an antireflection film in a manufacturing method of a semiconductor device which has a microscopic hole penetrating an interlayer insulating film. SOLUTION: An antireflection film 14 is formed on the upper part of an interlayer insulating film 12. A photoresist 16, having a prescribed aperture 8 on the upper part of the film 14, is patterned (Figure (A)). Etching is performed using the resist 16 as a mask, whereby a tapered through-hole 22 is provided on the film 14 (Figure (B)). The film 12 exposed in the through-hole 22 is removed, whereby a hole 24 is formed penetrating the film 12. |
