| 摘要 |
PROBLEM TO BE SOLVED: To enable efficient light emission ranging from red to yellow by making the thickness of a current diffused layer small easily and economically. SOLUTION: An n-type GaAs buffer layer 2, an n-type AlGaInP lower cladding layer 3, an undoped AlGaInP active layer 4, a p-type AlGaInP upper cladding layer 5 and a first p-type AlGaAs current diffused layer 6 are sequentially grown by an organo-metallic vapor phase epitaxial growth(MOVPE) method on an n-type GaAs substrate 1. Further a second p-type AlGaAs current diffusion layer 7 and a p-type GaAs contact layer 8 are sequentially grown by a liquid phase epitaxy(LPE) method on the laminate, so that the second p-type AlGaAs current diffused layer 7 has a thickness of 20 μm or more. |
