| 摘要 |
PROBLEM TO BE SOLVED: To obtain an ultra high speed transistor by forming an oxide film with an interface, that is flat and does not contain impurities in an atom layer near the surface of a single-crystal Si substrate. SOLUTION: A semiconductor device is manufactured by a method that uses deposition of an amorphous Si layer, formation of amorphous interface through ion implantation, and the recovery and thermal oxidation and the like of a low-damage region due to low-temperature heating. As a result, the heterostructure of an oxide film with a sharp and clean interface in an atom layer and a single-crystal Si can be formed, realizing operation of a transistor at an ultra-high speed.
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