| 摘要 |
PROBLEM TO BE SOLVED: To form a method for designing a semiconductor integrated circuit device capable of contriving to make high integration, and a record medium of layout data by a method wherein it is constituted by a control macro containing a trimming circuit and a plurality of memory units. SOLUTION: A system LSI 51 shares a trimming circuit 21 and a reference voltage generating circuit 22 not depending upon a magnitude of memory capacity of units 52 to 54 in voltage dropping circuits 52a to 54a of respective memory units 52 to 54, and similarly shares a trimming circuit 25 and a detection circuit 26 in substrate potential generating circuits 52b to 54b. The respective circuits 21, 22, 25, 26 are disposed in a separate control macro 55 from the respective memory units 52 to 54. Accordingly, measurement of a reference voltage Vr outputted from the reference voltage generating circuit 22 and a trimming process, and measurement of levels of a detection signal SG outputted from the detection circuit 26 and a trimming process have only to be conducted only for the single control macro 55, and are not required every memory units. Therefore, it is possible to shorten a test period of time at the time of shipping the system LSI 51.
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