| 摘要 |
PROBLEM TO BE SOLVED: To form an extremely short channel length and realize MOSFETs restricting short channel effects making use of resonance tunnel effects, by a method wherein a source/drain electrode is contained outside an insulation film and a gate electrode is contained outside a gate insulation film contained in a side wall of a polycrystal silicon film. SOLUTION: A tunnel insulation film 2 is provided at both sides of a polycrystal silicon channel region 1, and a source/drain electrode 5 is provided outside. A side wall of the polycrystal silicon channel region 1 is coated with a gate insulation film 6, and a gate electrode 4 is provided outside it. A source/ drain electrode 5 is insulated and isolated from the polycrystal silicon channel region 1 by the tunnel insulation film 2. As a result, short channel effects are restricted and the channel region 1 is formed with a double barrier structure comprising the tunnel insulation film 2, and a leak current at the time of turn- OFF is small. On the contrary, at the time of turn-ON, a resonance tunnel current flows between the source/drain electrodes 5 via the tunnel insulation film 2 to obtain a sufficient current.
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