发明名称 |
FORMING METHOD OF CATHODE CURRENT LIMITING HIGH RESISTANCE VALUE RESISTANCE IN FIELD EMISSION DISPLAY |
摘要 |
<p>PROBLEM TO BE SOLVED: To easily and suitably mass-produce a high resistance value resistance, and to form the high resistance value resistance together with an ohmic contact when necessary by forming an emitter site on a conductive area of a baseplate, and arranging a contact part connected to the conductive area in a resistance layer accumulated on the baseplate. SOLUTION: A high resistivity material is accumulated on a baseplate 12 to form a high resistance value resistance 32. The resistance 32 is insulated from the baseplate 12 by a thin insulating layer 40. The resistance 32 is electrically connected to an N-tank conductive area 16 of an emitter site 14 by a first contact part 38 to be connected to an interconnector 34 by a second contact part 39. The interconnector 34 is a conductive film to be electrically connected to the other circuit component of a FED pixel 10. A via 50 is formed in a multilevel oxidation layer 36, and the interconnector 34 is connected to the high resistance value resistance 32. Resitivity of the resistance 32 is a function of the dimension together with resistivity of a material.</p> |
申请公布号 |
JP2000164116(A) |
申请公布日期 |
2000.06.16 |
申请号 |
JP20000021971 |
申请日期 |
2000.01.31 |
申请人 |
MICRON DISPLAY TECHNOL INC |
发明人 |
LEE JOHN K;CATHEY JR DAVID A;TJADEN KEVIN |
分类号 |
H01J1/304;H01J9/02;H01J29/04;H01J31/12;H01L21/02;H01L21/822;H01L27/04;(IPC1-7):H01J9/02 |
主分类号 |
H01J1/304 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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