SEMICONDUCTOR PRESSURE SENSOR AND ITS MANUFACTURING METHOD

摘要

A portion corresponding to a pressure sensitive region of an n-type monocrystalline Si layer (1) is etched to an SiO2 layer (2) by using the SiO2 layer (2) as the etching stopper layer. The exposed SiO2 layer (2) is removed by etching. A predetermined amount of pressure sensitive region of an n-type monocrystalline Si layer (3) is etched to form a diaphragm (4). In such a way the SiO2 layer (2) is removed from the diaphragm (4) and a diaphragm edge portion (6).