发明名称 METHOD FOR FORMING DOUBLE-FACED THIN FILM OF HIGH TEMPERATURE SUPERCONDUCTOR BY SPUTTERING DEPOSITION
摘要 PURPOSE: To form a thin film of high temperature superconductor on both sides of an oxide substrate having large surface areas. CONSTITUTION: Two sintering targets(1,2) such as high temperature superconductor oxide YBa2Cu3O7-x are placed in a thin film depositing apparatus(11). A mono-crystalline oxide substrate(6) having large surface areas, such as, for example, MgO, SrTiO3, LaAlO3, Al2O3, LaSrGaO4, is fixed to a supporting structure(5), passing through separators(9,10). The substrate(6) is then rotated with the supporting structure(5) between the separators(9,10). While two heater(3,4) applies heat to both sides of the substrate(6), plasma generated from the targets(1,2) is sprayed on both sides of the substrate(6) and thereby a target material is deposited onto the substrate(6).
申请公布号 KR20000033367(A) 申请公布日期 2000.06.15
申请号 KR19980050207 申请日期 1998.11.23
申请人 KOREA ELECTRONICS & TELECOMMUNICATIONS RESEARCH INSTITUTE 发明人 SEO, JEONG DAE;HAN, SEOK GIL;KANG GWANG YONG
分类号 C23C14/08;C23C14/34;C23C14/50;C23C14/54;C30B23/02;H01L39/24 主分类号 C23C14/08
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