| 摘要 |
PURPOSE: A fabrication method of semiconductor devices having an SOI(silicon on insulator) structure is provided to easily control a floating body effect by selectively forming a silicide layer between an active region applied to a bias and an active region formed a transistor. CONSTITUTION: Polysilicon sidewalls(37) are formed at both sides of a first and a second active regions(33,33-1) defined by a field oxide(41), thereby connecting between the active regions(33,33-1) and a substrate. A gate line(43) is formed on the first active region(33). A silicide layer(39) is selectively formed between the first active region(33) used as transistor formation region and the second active region(33-1) used as a bias applying part. The silicide layer(39) is formed only on the surface of the substrate and the polysilicon sidewalls(37) for electrically connecting between the first and the second active regions(33,33-1).
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