| 摘要 |
PURPOSE: A semiconductor laser diode having leaky waveguide structure is provided which performs basic mode oscillation even at a wide stripe width to reduce optical power density but to increase COD level and raises a kink level through high quantum efficiency to enable high power operation. CONSTITUTION: A semiconductor laser diode includes an n-type GaAS substrate(101), an n-type InGaAlP clad layer(103) and an InGaP active layer(104) sequentially formed on the substrate, a p-type InGaAlP clad layer(105) having a stripe-shape protruded portion at the center formed on the active layer, an n-type AlGaAs lower current blocking layer(111) and an n-type AlGaAs upper current blocking layer(112) sequentially deposited on the portion of the p-type clad layer other than the protruded portion. The p-type InGaAP clad layer has a mesa structure. The current blocking layers are formed of materials having a band gap energy larger than the band gap energy of the active layer.
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