| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device, which can achieve complete cleaning of the surface of a Cu groove wiring and the complete removal of attachment produced on the sidewall of an aperture formed in an SiO2 film. SOLUTION: This manufacturing method of a semiconductor device, which has a process for forming a first layer Cu groove wiring 12 and a process, wherein an insulating layer (an SiN film 13 and an SiO2 film 14) is deposited on the wiring 12, and a via hole 17 is formed in the above insulating layer using a photoresist 16 as a mask, is provided with a process, wherein after the formation of the via hole 17, ashing which also serves as an oxidation, is performed in an oxygen plasma atmosphere, whereby together with the removal of the resist 16, a copper-containing attachment 19 production is conducted on the sidewall and at the bottom of an aperture formed in the film 14 and a high-resistance layer 18 are oxidized. After that, the oxide layer 20 is removed with a solution containing citric acid as its main component at normal temperatures.
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